| PART |
Description |
Maker |
| FQPF10N20C FQPF10N20CNL |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET 9.5 A, 200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFM220B IRFM220BTFFP001 IRFM220BD84Z |
1.13 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFM220A
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| IRFD210 |
200V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A)
|
International Rectifier
|
| IRF9630 IRF9630PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
CAP 4.7PF 50V /-0.25PF C0G SMD-0402 TR-7-PA SN100 HIGH-FREQ
|
IRF[International Rectifier]
|
| IRFU220N IRFR220N IRFR220NTR IRFR220NTRL IRFR220NT |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 5A条（丁）|52AA
Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF9620S IRF9620STRL IRF9620STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V Rds(on)=1.5ohm Id=-3.5A)
Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A)
Power MOSFET(Vdss=-200V/ Rds(on)=1.5ohm/ Id=-3.5A)
|
IRF[International Rectifier]
|
| FQT4N20L FQT4N20LTF |
200V N-Channel Logic Level QFET
200V LOGIC N-Channel MOSFET 0.85 A, 200 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| STP19NF20 STF19NF20 STB19NF20 |
15 A, 200 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel 200V - 0.15ヘ - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY⑩ Power MOSFET
N-channel 200V - 0.15Ω - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY Power MOSFET
|
STMicroelectronics
|
| IRHNA57260 IRHNA54260 IRHNA58260 IRHNA57060 IRHNA5 |
200V N-CHANNEL
RADIATION HARDENED POWER MOSFET
200V, N-CHANNEL
|
IRF[International Rectifier]
|
| IRHNA597260 2129 IRHNA593260 IRHNA597260PBF |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package
From old datasheet system
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
35.5 A, 200 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET
|
IRF[International Rectifier]
|
| IRFB31N20D IRFS31N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直|1A条（丁）|63AB
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）最大值\u003d 0.082ohm，身份证\u003d 31A条）
|
International Rectifier, Corp.
|
| IRFB17N20D IRFS17N20D IRFS17N20DTRL IRFS17N20DTRR |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package
|
International Rectifier
|
